Solid State Electronic Devices- B.G. Streetman, B. Sanjay – 6th Edition

Description

This classic of Introduction to , in its sixth edition maintains the two objectives and basic concepts of development, for ; with which the current and future devices can be understood. It also provides its readers with a solid understanding of current .
 
The is useful for advanced undergraduate and postgraduate students in electrical and electronic engineering, and can also be very useful for interested in upgrading their knowledge of modern .

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Table of Contents

Crystal Properties and Growth of Semiconductors.
Atoms and Electrons.
Energy Bands and Charge Carriers in Semiconductors.
Excess Carriers in Semiconductors.
Junctions.
Field-Effect Transistors.
Bipolar Junction Transistors.
Optoelectronic Devices.
Integrated Circuits.
High-Frequency and High-Power Devices.

 
Appendices
I. Definitions of Commonly Used Symbols.
II. Physical Constants and Conversion Factors.
III. Properties of Semiconductor Materials.
IV. Derivation of the Density of States in the Conduction Band.
V. Derivation of Fermi-Dirac Statistics.
VI. Dry and Wet Thermal Oxide Thickness Grown on Si (100) as a Function of Time and Temperature.
VII. Solid Solubilities of Impurities in Si.
VIII. Diffusivities of Dopants in Si and SiO2.
IX. Projected Range an Straggle as Function of Implant Energy in Si.
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